"Towards Atmospheric Radical Sensing: Fabrication of Junctionless Transistors" - presentation for Nanonet+ Workshop 2022

Abstract: Silicon nanowires, due to their high surface-to-volume ratio, have demonstrated energy-efficient devices. In this work, we report on the fabrication and electrical characterization of the junctionless nanowire transistor, a transistor consisting of a highly doped nanowire channel without p-n junctions, where the flow of carriers is controlled by the gate potential. To fabricate these transistors, intrinsic silicon-on-insulator (SOI) wafers were n-doped by ion implantation. Flash lamp annealing was performed for dopant activation and mitigation of implantation defects. Nanowires were fabricated following a top-down approach using electron beam lithography and reactive ion etching. Electrical characterization of the fabricated devices is performed by back-gating. The devices show an on/off current ratio of approx. 106. This will be followed by the functionalization of the fabricated devices for the selective and highly sensitive electrical detection of ꞏOH and ꞏNO3 atmospheric radicals, which affect the air quality and climate and have a direct impact on our lives.Dr. Muhammad Bilal Khan presented this talk for the Nanonet+ Workshop Görlitz, 2022. RADICAL represents a 'Fundamental Breakthrough in Detection of Atmospheric Free Radicals'. Find out more on the RADICAL project website: radical-air.eu The RADICAL project has received funding from the European Union's Horizon 2020 research and innovation programme under grant agreement number 899282